60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using tren...
60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
G GDS
S
PDP6908
BVDSS 60V
RDSON 34m
ID 30A
Features 60V,30A,RDS(ON) =34mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Motor Drive Power Tools LED Lighting
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Sing...