PMP08N60M

600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration D GDS G S PMP08N60M BVDSS 600V RDSON 1.2 ID 7A Features  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  TV Power  Adapter/charger  Server Power  PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current ...