DatasheetsPDF.com

PDP02N65 Dataheets PDF



Part Number PDP02N65
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDP02N65 DatasheetPDP02N65 Datasheet (PDF)

650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration PDP02N65 BVDSS 650V RDSON 9Ω ID 2A Features .

  PDP02N65   PDP02N65



Document
650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration PDP02N65 BVDSS 650V RDSON 9Ω ID 2A Features  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies  TV Power  Adapter/charger  LED Lighting GDS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche E.


PDP03N65 PDP02N65 PDP01N65


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)