100V P-Channel MOSFETs
PDP0905
General Description
These P-Channel enhancement mode power field effect transistors are...
100V P-Channel MOSFETs
PDP0905
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
GDS
G
S
BVDSS -100V
RDSON 210m
ID -10A
Features
-100V,-10A, RDS(ON) 210mΩ@VGS = -10V Improved dv/dt capability Fast switching Green Device Available
Applications
Networking Load Switch LED applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pul...