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PDP0905

Potens semiconductor

P-Channel MOSFETs

100V P-Channel MOSFETs PDP0905 General Description These P-Channel enhancement mode power field effect transistors are...


Potens semiconductor

PDP0905

File Download Download PDP0905 Datasheet


Description
100V P-Channel MOSFETs PDP0905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S BVDSS -100V RDSON 210m ID -10A Features  -100V,-10A, RDS(ON) 210mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pul...




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