650V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using adv...
650V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply
TO220F Pin Configuration
GDS
PDF02N65
BVDSS 650V
RDSON 9Ω
ID 2A
Features Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications High efficient switched mode power supplies TV Power Adapter/charger LED Lighting
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche E...