PDD2612A

20V N-Channel MOSFETs PDD2612A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 20V RDSON 17m ID 30A Features  20V,30A, RDS(ON) =17mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Chip Limitation ,TC=25℃) Drain Current – Continuous (Chip Limitation ,TC=100℃) Drain Current – P...