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PDD3094 Dataheets PDF



Part Number PDD3094
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDD3094 DatasheetPDD3094 Datasheet (PDF)

30V N-Channel MOSFETs PDD3094 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 30V RDSON 4m ID 90A Fe.

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30V N-Channel MOSFETs PDD3094 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 30V RDSON 4m ID 90A Features  30V, 90A, RDS(ON) =4mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche .


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