90N55F4

STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008 Ω t(s)■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) uc■ 100% avalanche tested 90 A rodApplications te P■ Switching applications oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance. 2 3 3 1 H²PAK Figure 1. Internal schematic diagram $ ' Obsolete Pro 3 !-V Table 1. Device summary Order code Marking Packages Packaging STH90N55F4-2 90N55F4 H²PAK Tape and reel August 2011 Doc ID 15608 Rev 4 1/16 www.st.com 16 Contents Contents STH90N55F4-2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical cha...