CMOS SRAM. AT60142ET Datasheet

AT60142ET Datasheet PDF, Equivalent


Part Number

AT60142ET

Description

Rad Hard 512K x 8 Very Low Power CMOS SRAM

Manufacture

ATMEL Corporation

Total Page 17 Pages
PDF Download
Download AT60142ET Datasheet


AT60142ET Datasheet
Features
Operating Voltage: 3.3V
Access Time:
– 15 ns (Preview) for 3.3V biased only (AT60142E)
– 17 ns and 20 ns for 5V Tolerant (AT60142ET)
Very Low Power Consumption
– Active: 810 mW (Max) @ 15 ns
– Standby: 215 µW (Typ)
Wide Temperature Range: -55 to +125°C
500 Mils Width Package
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 Micron Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65 µA) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns
specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Note: 1. Preliminary: contact factory for availability.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142E
AT60142ET
Rev. 4156F–AERO–06/04
1

AT60142ET Datasheet
Block Diagram
AT60142E/ET
Pin Configuration
A0
A1
A2
A3
A4
CS
I/O1
I/O2
Vcc
GND
I/O3
I/O4
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36 NC
35 A18
34 A17
3
6
33 A16
- 32 A15
p
in
31 OE
-F 30 I/O8
la
tp
a
29 I/O7
28 GND
c
k
27 Vcc
- 26 I/O6
5
0
0
25 I/O5
M 24 A14
ils 23 A13
22 A12
21 A11
20 A10
19 VRef
4156F–AERO–06/04
2


Features Datasheet pdf Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • – 15 ns (Preview) for 3.3V biased only (AT60142E) – 17 ns a nd 20 ns for 5V Tolerant (AT60142ET) Ve ry Low Power Consumption – Active: 81 0 mW (Max) @ 15 ns – Standby: 215 µW (Typ) Wide Temperature Range: -55 to + 125°C 500 Mils Width Package TTL-Compa tible Inputs and Outputs Asynchronous D esigned on 0.25 Micron Process No Singl e Event Latch Up below LET Threshold of 80 MeV/mg/cm 2 Tested up to a Total Do se of 300 krads (Si) according to MIL-S TD-883 Method 1019 500 Mils Wide FP36 P ackage ESD Better than 4000V Rad Hard 512K x 8 Very Low Power CMOS SRAM AT601 42E AT60142ET Description The AT60142E /ET are very low power CMOS static RAM organized as 524 288 x 8 bits. Atmel br ings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electron ics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an extr.
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