UPD70F3376A

Data Sheet V850ES/FG3 32-bit Single-Chip Microcontroller Hardware µPD70F3374(A) µPD70F3374(A1) µPD70F3374(A2) µPD70F3375(A) µPD70F3375(A1) µPD70F3375(A2) µPD70F3376A(A) µPD70F3376A(A1) µPD70F3376A(A2) µPD70F3377A(A) µPD70F3377A(A1) µPD70F3377A(A2) Document No. U18566EE1V3DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany Data Sheet U18566EE1V3DS00 2 V850ES/FG3 Notes for CMOS Devices 1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static...