Document
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
PNP Silicon High-Power
Transistors
. . . designed for use in power amplifier and switching circuits.
• Low Collector–Emitter Saturation Voltage —
IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99
IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745
• DC Current Gain Specified — 1.0 to 30 Adc • Complements to NPN 2N5301, 2N5302, 2N5303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N4398 2N4399 2N5745 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO VCB VEB
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous Peak
IB
ÎÎÎÎÎÎÎÎ.