CONTROL THYRISTOR. AT607 Datasheet

AT607 Datasheet PDF, Equivalent


Part Number

AT607

Description

PHASE CONTROL THYRISTOR

Manufacture

Power Semiconductors

Total Page 4 Pages
PDF Download
Download AT607 Datasheet PDF


AT607 Datasheet
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 03
AT607
Repetitive voltage up to
Mean on-state current
Surge current
800 V
2585 A
36 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C]
Value
Unit
V RRM
Repetitive peak reverse voltage
140 800
V
V RSM
Non-repetitive peak reverse voltage
140 900
V
V DRM
Repetitive peak off-state voltage
140 800
V
I RRM
Repetitive peak reverse current
V=VRRM
140 100
mA
I DRM
Repetitive peak off-state current
V=VDRM
140 100
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2585
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
2420
A
I TSM
Surge on-state current
sine wave, 10 ms
140 36
kA
I² t I² t
without reverse voltage
6480 x1E3 A²s
V T On-state voltage
On-state current = 6000 A
25 1.55
V
V T(TO)
Threshold voltage
140 0.8
V
r T On-state slope resistance
140 0.120
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 2600 A, gate 10V 5ohm 140 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
140 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
250 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1730 A
140 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=5V, tp=30µs
25 700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 200
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
140 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 140
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT607 S 08
standard specification
VDRM&VRRM/100

AT607 Datasheet
AT607 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 03
ANSALDO
Th [°C]
140
130
120
110
100
90
80
70
60
50
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90°
120°
180°
DC
500 1000 1500 2000 2500 3000 3500
IF(AV) [A]
PF(AV) [W]
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
120°
90°
60°
180°
30°
DC
500 1000 1500 2000 2500 3000 3500
IF(AV) [A]


Features Datasheet pdf ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT607 Repetitive v oltage up to Mean on-state current Surg e current 800 V 2585 A 36 kA FINAL SPE CIFICATION feb 97 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] 1 40 140 140 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive pe ak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-sta te voltage Repetitive peak reverse curr ent Repetitive peak off-state current V =VRRM V=VDRM 800 900 800 100 100 V V V mA mA 140 140 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state curr ent Mean on-state current Surge on-stat e current I² t On-state voltage Thresh old voltage On-state slope resistance 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, dou ble side cooled sine wave, 10 ms without reverse voltage On-state cur.
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