Document
60V P-Channel MOSFETs
PDD6901
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D G
S G
D S
BVDSS -60V
RDSON 9.2m
ID -70A
Features -60V,-70A, RDS(ON) =9.2mΩ@VGS = -10V
Fast switching Green Device Available
Suit for -4.5V Gate Drive Applications
Applications
POL Applications Load Switch LED Application
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy.