20V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using tren...
20V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TSSOP8 Dual Pin Configuration
G2 S2 S2
D1/D2
G1 S1 S1 D1/D2
PDEW2210
BVDSS 20V
RDSON 12m
ID 7.5A
Features 20V, 7.5A, RDS(ON)=12mΩ@VGS=4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications G-S ESD protection diode embedded
Applications
Notebook Load Switch LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuo...