PDD6701

60V N+P Dual Channel MOSFETs PDD6701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252-4L Pin Configuration D1 D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 19A -17A Features  Fast switching  Green Device Available  Suit for 4.5V Gate Drive Applications Applications  DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Curre...