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40V N+P Dual Channel MOSFETs
PDD4701
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO252-4L Pin Configuration D1 D2
D1/D2
S1G1S2G2
G1
G2 S1
S2
BVDSS 40V -40V
RDSON 32m 40m
ID 15A -12A
Features Fast switching Green Device Available Suit for 4.5V Gate Drive Applications
Applications
DC Fan Motor Drive Applications Networking Half / Full Bridge Topology
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – P.