Production specification
NPN General Purpose Transistor
FEATURES
z Epitaxial planar die construction. z Complementary ...
Production specification
NPN General Purpose
Transistor
FEATURES
z Epitaxial planar die construction. z Complementary
PNP type available
(MMST5401). z Also available in lead free version.
Pb
Lead-free
MMST5551
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMST5551
K4N
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
VCBO
collector-base voltage
180
VCEO
collector-emitter voltage
160
VEBO
emitter-base voltage
6
IC collector current (DC)
0.6
PC Collector dissipation
0.3
RθJA Thermal resistance junction to ambient
625
Tj ,Tstg
junction and storage temperature
-55 to +150
UNIT V V V A W °C/W °C
F056 Rev.A
www.gmicroelec.com 1
Production specification
NPN General Purpose
Transistor
MMST5551
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
V(BR)CBO Collector-base breakdown vol...
