www.vishay.com
V60100C-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra L...
www.vishay.com
V60100C-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-220AB
V60100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 100 V 320 A 0.66 V 150 °C
TO-220AB
Diode variation
Common cathode
MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable pe...
