CONTROL THYRISTOR. AT704 Datasheet

AT704 Datasheet PDF, Equivalent


Part Number

AT704

Description

PHASE CONTROL THYRISTOR

Manufacture

Power Semiconductors

Total Page 4 Pages
PDF Download
Download AT704 Datasheet PDF


AT704 Datasheet
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Feb 97 - ISSUE : 04
AT704
Repetitive voltage up to
Mean on-state current
Surge current
1600 V
640 A
8 kA
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 1000 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 720 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 470 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT704 S 16
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
125 1600
125 1700
125 1600
125 50
125 50
V
V
V
mA
mA
640 A
515 A
125 8
kA
320 x1E3 A²s
25 1.58
V
125 0.86
V
125 0.790
mohm
125 200
125 500
25 1.3
250
125
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
125 0.25
30
10
5
150
2
V
mA
V
V
A
V
W
W
52
10
-30 / 125
8.4 / 9.4
280
°C/kW
°C/kW
°C
kN
g

AT704 Datasheet
AT704 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION Feb 97 - ISSUE : 04
ANSALDO
Th [°C]
130
120
110
100
90
80
70
60
50
0
PF(AV) [W]
1400
1200
1000
800
600
400
200
0
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90°
120°
180°
200 400 600
IF(AV) [A]
DC
800 1000
120°
90°
60°
30°
180°
DC
200 400 600 800 1000
IF(AV) [A]


Features Datasheet pdf ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT704 Repetitive v oltage up to Mean on-state current Surg e current 1600 V 640 A 8 kA FINAL SPEC IFICATION Feb 97 - ISSUE : 04 Symbol Characteristic Conditions Tj [°C] 12 5 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive pea k reverse voltage Non-repetitive peak r everse voltage Repetitive peak off-stat e voltage Repetitive peak reverse curre nt Repetitive peak off-state current V= VRRM V=VDRM 1600 1700 1600 50 50 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state curr ent Mean on-state current Surge on-stat e current I² t On-state voltage Thresh old voltage On-state slope resistance 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, dou ble side cooled sine wave, 10 ms without reverse voltage On-state cur.
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