CONTROL THYRISTOR. AT738 Datasheet

AT738 Datasheet PDF, Equivalent


Part Number

AT738

Description

PHASE CONTROL THYRISTOR

Manufacture

Power Semiconductors

Total Page 4 Pages
PDF Download
Download AT738 Datasheet PDF


AT738 Datasheet
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 02
AT738
Repetitive voltage up to
Mean on-state current
Surge current
2200 V
3670 A
60 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
125 2200
V
V RSM
Non-repetitive peak reverse voltage
125 2300
V
V DRM
Repetitive peak off-state voltage
125 2200
V
I RRM
Repetitive peak reverse current
V=VRRM
125 200
mA
I DRM
Repetitive peak off-state current
V=VDRM
125 200
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
3670
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
2860
A
I TSM
Surge on-state current
sine wave, 10 ms
125 60
kA
I² t I² t
without reverse voltage
18000 x1E3 A²s
V T On-state voltage
On-state current = 2000 A
25 1.1
V
V T(TO)
Threshold voltage
125 0.92
V
r T On-state slope resistance
125 0.090
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min. From 75% VDRM up to 3000 A, gate 10V 5ohm 125 200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 75% of VDRM
125 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 80% VDRM
320 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 2000 A
125 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=5V, tp=30µs
25 700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 350
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
11 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 125
40.0 / 50.0
1700
°C
kN
g
ORDERING INFORMATION : AT738 S 22
standard specification
VDRM&VRRM/100

AT738 Datasheet
AT738 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
ANSALDO
Th [°C]
130
120
110
100
90
80
70
60
50
0
PF(AV) [W]
7000
6000
5000
4000
3000
2000
1000
0
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90°
120°
180°
1000
2000
3000
IF(AV) [A]
4000
DC
5000
120°
90°
180°
60°
30°
DC
1000
2000
3000
IF(AV) [A]
4000
5000


Features Datasheet pdf ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT738 Repetitive v oltage up to Mean on-state current Surg e current 2200 V 3670 A 60 kA FINAL SP ECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive p eak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-st ate voltage Repetitive peak reverse cur rent Repetitive peak off-state current V=VRRM V=VDRM 2200 2300 2200 200 200 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on- state current I² t On-state voltage Th reshold voltage On-state slope resistan ce 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, double side cooled sine wave, 10 ms without reverse voltage On-state.
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