Document
LITE-ON SEMICONDUCTOR
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams
TB0640H thru TB3500H
Bi-Directional VDRM - 58 to 320 Volts IPP - 100 Amperes
SMB
SMB
DIM. MIN. MAX. A
A 4.06 4.57
B 3.30 3.94 B C C 1.96 2.21
D 0.15 0.31
E 5.21 5.59
G
H FD E
F 0.05 0.20 G 2.01 2.62 H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP ITSM
TJ TSTG
CHARACTERISTICS
Junction to leads Junction to ambient on print circuit (on recommended pad .