temperature Triacs. ADT8CH80G Datasheet

ADT8CH80G Triacs. Datasheet pdf. Equivalent

ADT8CH80G Datasheet
Recommendation ADT8CH80G Datasheet
Part ADT8CH80G
Description 3 Quadrants High temperature Triacs
Feature ADT8CH80G;   ADV 3 Quadrants High temperature Triacs       ADT8CH60G/80G General Description High current den.
Manufacture ADV
Datasheet
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ADV ADT8CH80G
 
ADV
3 Quadrants High temperature Triacs
     
ADT8CH60G/80G
General Description
High current density due to mesa technology , guaranteed maximum
junction temperature 150° C. The ADT8CH triac series is suitable for
general purpose AC switching. They can beused as an ON/OFF function
in applications such as static relays, heating regulation, High power motor
controls e.g. washing machines and vacuum cleaners,Rectifier-fed DC
inductive loads e.g.DC motors and solenoids , motor speed controllers.
The heatsink can be reduced,compared to traditional triacs, according to
the high performance at given junction temperatures.
Features
Repetitive Peak Off-State Voltage: 600V/800V
R.M.S On-State Current ( IT(RMS)= 8A )
High Commutation dv/dt
High junction temperature operating capability
These Devices are Pb-Free and are RoHS Compliant
2.T2
3.Gate
1.T1
2
12
3
TO-263-2
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 135 °C
Conditions
ADT8CH60G
ADT8CH80G
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 150°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 150°C
Average Gate Power Dissipation(Tj=150°C)
Peak Gate Power Dissipation(tp=20us,Tj=150°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
8
100/106
48
50
4
1
10
- 40 ~ 150
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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ADV
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ADV ADT8CH80G
 
ADV
     
ADT8CH60G/80G
Electrical Characteristics( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 150°C
ITM = 11A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 150°C
Q1-Q2-Q3
Q1-Q2-Q3
Gate Trigger Voltage
Gate Trigger Current
VD = 12V RL = 33
Q1-Q2-Q3
Holding Current
IT = 0.1A
Q1-Q3
Q2
Latching Current
IG = 1.2 IGT
Critical Rate of Rise of Off-State
Voltage
VD = 2/3VDRM gate open
Tj = 150°C
Critical Rate of Change of
Commutating Voltage
VD=400V Tj = 150°C
(dI/dt)c=-3.5A/ms
Junction to case (AC)
Junction to ambient(Copper surface under tab:S=1cm2)
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADT8CH60G/80G
S Blank B
5
2.5
1.5
Unit
uA
mA
V
0.2 V
1.5 V
10 35 50 mA
20 45 60 mA
20 50 70
mA
35 70 100
200
1000
1500 V/μs
1 15 20 V/μs
1.85
45
°C/W
°C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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Feb,2013 -Rev.3.02



ADV ADT8CH80G
 
ADV
FIG.2: Maximum on-state power dissipation
10
8
6
4
360° Full Cycle
2
0 1 2 3 4 5 6 7 8 9 10
Power Dissipation(W)
FIG.4: Maximum transient thermal impedance
105
104
     
ADT8CH60G/80G
FIG.3: Typical RMS on-state current VS
Allowable case Temperature
150
120
90
60
360° Full Cycle
30
0
0 2 4 6 8 10
R.M.S On-state Current(A)
FIG.5: Rated surge
( Non-Repetitive)
102
on-state
current
f=60Hz
f=50Hz
10
103
102
101
0.1
1
Rth(j-c)(°C/W),Transient Thermal Impedance
10
1
0
FIG.6:
Tj=25°C Max
20 40 60 80 100 120 140 160
ITSM(A),Surge On-State Current
Gate trigger current VS Junction
temperature
150
125
100
75
50
25
0
-25
-50
0 50 100 150 200 250
IGT(Tj)/IGT(25°C) x 100(%)
 
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