DatasheetsPDF.com

Si7170DP Dataheets PDF



Part Number Si7170DP
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet Si7170DP DatasheetSi7170DP Datasheet (PDF)

N-Channel 30-V (D-S) MOSFET Si7170DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 29 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7170DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATI.

  Si7170DP   Si7170DP



Document
N-Channel 30-V (D-S) MOSFET Si7170DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 29 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7170DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PC Core - Low Side • VRM POL D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25.



Similar Datasheet



HB52RF1289E2-75B << | Si7170DP | >> 2SD1085


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)