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N-Channel 30-V (D-S) MOSFET
Si7170DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0034 at VGS = 10 V 30
0.0043 at VGS = 4.5 V
ID (A)a 40g 40g
Qg (Typ.) 29 nC
PowerPAK SO-8
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7170DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg and Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PC Core
- Low Side • VRM POL
D
G
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L =0.1 mH
IAS EAS
TC = 25.
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