Si4925DY

Si4925DY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.032 @ VGS = - 10 V - 30 0.045 @ VGS = - 4.5 V ID (A) - 6.3 - 5.3 FEATURES D TrenchFETr Power MOSFET S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg - 30 "20 - 6.3 - 4.7 - 5.0 - 3.7 - 40 - 1.7 - 0.9 2 1.1 1.3 0.70 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t v 10 sec Steady-State Steady-State Notes a. Surface Mounted on FR4 Board, t v 10 sec. ...