STP4925
Dual P Channel Enhancement Mode MOSFET
-7.2A
DESCRIPTION
STP4925 is the dual P-Channel logic enhancement mode ...
STP4925
Dual P Channel Enhancement Mode MOSFET
-7.2A
DESCRIPTION
STP4925 is the dual P-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management, and other battery powered circuits where high-side switching
PIN CONFIGURATION SOP-8
FEATURE
l -30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V
l -30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.5V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l SOP-8 package design
PART MARKING SOP-8
Y:Year Code A:date Code B:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4925 2009. V1
STP4925
Dual P Channel Enhancement Mode MOSFET
-7.2A
ABSOULTE MAXI...