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ST1005SRG Dataheets PDF



Part Number ST1005SRG
Manufacturers Stanson Technology
Logo Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Datasheet ST1005SRG DatasheetST1005SRG Datasheet (PDF)

ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The p.

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ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G 1 S 2 FEATURE l -100V/-0.8.0A, RDS(ON) = 650m-ohm (Typ.) @VGS = -10V l -60V/-0.4A, RDS(ON) = 700m-ohm @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 105YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mounta.


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