ST3407S23RG
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407S23RG is the P-Channel logic enhancement mode pow...
ST3407S23RG
P Channel Enhancement Mode MOSFET
-3.6A
DESCRIPTION
ST3407S23RG is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D GS 12
FEATURE
-30V/-4.0A, RDS(ON) = 45mΩ(Typ.) @VGS = -10V
-30V/-3.2A, RDS(ON) = 65mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
3
A7YA
12 Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.st...