STP4403

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOP-8 FEATURE -20V/-10.0A, RDS(ON) = 30mΩ @VGS = -4.5V -20V/-8.6A, RDS(ON) = 35mΩ @VGS = -2.5V -20V/-7.6A, RDS(ON) = 48mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y: Year Code A: Week Code P: Package Code B: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com...