STP4441

STP4441 P Channel Enhancement Mode MOSFET -10A SCRIPTION STP4441 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE l -60V/-10.0A, RDS(ON) = 55mΩ (Typ.) @VGS =-10V l -60V/-5.0A, RDS(ON) = 73mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP-8 Y：Year Code A：Date Code B：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP4441 2010. V1 STP4441 P Channel Enhancement Mode MOSFET -10A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter ...