STP4953

STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE -30V/-5.2A, RDS(ON) = 60mΩ @VGS =-10V -30V/-4.5A, RDS(ON) = 80mΩ @VGS = -6.0V -30V/-3.8A, RDS(ON) = 90mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A ABSOULTE MAXIMUM RATINGS (Ta =...