STN4850

STN4850 N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 60V/7.2A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V � 60V/6.8A, RDS(ON) = 32mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4850 2010. V1 STN4850 N Channel Enhancement Mode MOSFET 7.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise no...