STN4392

STN4392 N Channel Enhancement Mode MOSFET 13A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 30V/13A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V � 30V/10A, RDS(ON) = 12mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN4392 YA Y：Year Code A：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4392 2009. V1 STN4392 N Channel Enhancement Mode MOSFET 13A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unle...