STN2610D

STN2610D N Channel Enhancement Mode MOSFET 50.0A DESCRIPTION STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 TO-251 FEATURE l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V l 60V/8.0A, RDS(ON) = 12mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252, TO-251 package design PART MARKING Y： Year Code A：Process Code B：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 STN2610D N Channel Enhancement Mode MOSFET 50.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 60 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 50.0 28...