STN210D

STN210D N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE l 30V/20A, RDS(ON) = 3mΩ @VGS = 10V l 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y Year Code A Date Code B Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST210D 2016 V1 STN210D N Channel Enhancement Mode MOSFET 80.0A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage Continuous Drain Current (TJ=150 ) Pulsed Drain Current TA=25 TA=...