Document
ST18N10D
N Channel Enhancement Mode MOSFET
18.0A
DESCRIPTION
ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252
FEATURE
! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V
! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.0V
Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! TO-252 Package design
PART MARKING
W: Wafer Code P: Product Code Y: Year Code A: Produce Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18N10D 2009. V1
ST18N10D
N Channel Enhancement Mode MOSFET
18.0A
ABSOULTE M.