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ST18N10D Dataheets PDF



Part Number ST18N10D
Manufacturers STANSON
Logo STANSON
Description N-Channel Enhancement Mode MOSFET
Datasheet ST18N10D DatasheetST18N10D Datasheet (PDF)

ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE ! 100V.

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ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE ! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V ! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.0V Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! TO-252 Package design PART MARKING W: Wafer Code P: Product Code Y: Year Code A: Produce Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST18N10D 2009. V1 ST18N10D N Channel Enhancement Mode MOSFET 18.0A ABSOULTE M.


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