Document
STP4189D
P Channel Enhancement Mode MOSFET
-12.0A
DESCRIPTION
STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
-40V/-12.0A, RDS(ON) = 18mΩ (Typ.) @VGS = -10V
-40V/-8.0A, RDS(ON) = 24mΩ @VGS =-4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Week Date Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STP4189D 2009. V1
STP4189D
P Channel Enhancement Mode MOSFET
-12.0A
ABSOULTE .