ST13P10

ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE l -100V/-13.0A, RDS(ON) = 130mΩ @VGS = -10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com PDF created with pdfFactory Pro trial version www.pdffactory.com Copyright © 2009, Stanson Corp. ST13P10 2009. V1 ST13P10 P Channel Enhancement Mode MOSFET -13.0A ABSO...