ST47P06D

ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching. PIN CONFIGURATION FEATURE -60V/-24A, RDS(ON) = 22mΩ (Typ.) @VGS = -10V -60V/-10A, RDS(ON) = 30mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) Pulsed Drain Current Power Dissipation Operation Junction Temperature Storgae Temperature Range TA=25 TA=80 TA=25 Symb ol VDSS VGSS ID IDM PD TJ TSTG...