N-Channel Enhancement Mode MOSFET
STN488DN
N Channel Enhancement Mode MOSFET
100A
DESCRIPTION
STN488DN uses Trench MOSFET technology that is uniquely opti...
Description
STN488DN
N Channel Enhancement Mode MOSFET
100A
DESCRIPTION
STN488DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION POWER PACK 5x6
DD DD
FEATURE
l 40V/25A, RDS(ON) = 2.2mΩ @VGS = 10V
l 40V/12A, RDS(ON) = 2.6mΩ @VGS = 4.5V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l PPAK5x6 package design
S S SG
Y:Year Code A:Date Code B:Package Code C:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN488DN 2016 V1
STN488DN
N Channel Enhancement Mode MOSFET
100A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
40
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain ...
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