N-Channel Enhancement Mode MOSFET
STN456DN
N Channel Enhancement Mode MOSFET
70A
DESCRIPTION
STN456DN uses Trench MOSFET technology that is uniquely optim...
Description
STN456DN
N Channel Enhancement Mode MOSFET
70A
DESCRIPTION
STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION POWER PACK 5x6 (1212-8L)
DD DD
FEATURE
l 30V/30A, RDS(ON) = 4.0mΩ(Typ.) @VGS = 10V
l 30V/15A, RDS(ON) = 5.8mΩ @VGS = 4.5V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l PPAK5x6 (1212-8L) package design
S S SG
Y:Year Code A:Date Code B:Package Code C:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN456DN 2016 V1
STN456DN
N Channel Enhancement Mode MOSFET
70A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
Continuous Drain Curre...
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