ST05N20

ST05N20 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST05N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOT-223 FEATURE l 200V/2.0A, RDS(ON) = 800m @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-223 package design 0520 : Product Code A : Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. ST05N20 2014. V1 ST05N20 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source ...