ST75N75

ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design MARKING PIN CONFI STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST75N75 2011. V1 ST75N75 N Channel Enhancement Mode MOSFET 75.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Avalanche Current Symbol VDSS TA=25℃ TA=70℃ VGSS ID IDM IAS Typical 75 ±20 93.0 75.0 370 70 Power Dissipation TA=25℃ PD 200 Operation Junction Temperature Storgae Tem...