UM4800

UM4800 30V Dual N-Channel Enhancement Mode MOSFET  DESCRIPTION The UM4800 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  FEATURE  30V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V  30V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V  30V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design  APPLICATIONS  Power Management  Portable Equipment  DC/DC Converter  Load Switch  DSC  LCD Display inverter  PIN CONFIGURATION UM4800 Rev B 28/July/2010 Copyright ® UniverChipSemi Co.,Ltd 1/8 www.ucsemi.com UM480...