2SK2330L

2SK2330(L), 2SK2330(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings 500 ±30 15 60 15 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2330(L), 2SK2330(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Drain to source breakdown voltage V(BR)DSS 500 — — Gate to source breakdown voltage V(BR)GSS ±30 — — Gate to source leak cu...