CONTROL THYRISTOR. AT866LTS36 Datasheet

AT866LTS36 Datasheet PDF, Equivalent


Part Number

AT866LTS36

Description

PHASE CONTROL THYRISTOR

Manufacture

Power Semiconductors

Total Page 4 Pages
PDF Download
Download AT866LTS36 Datasheet


AT866LTS36 Datasheet
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
apr 97 - ISSUE : 01
AT866LT
Repetitive voltage up to
Mean on-state current
Surge current
3600 V
2375 A
29.1 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
125 3600
V
V RSM
Non-repetitive peak reverse voltage
125 3700
V
V DRM
Repetitive peak off-state voltage
125 3600
V
I RRM
Repetitive peak reverse current
V=VRRM
125 250
mA
I DRM
Repetitive peak off-state current
V=VDRM
125 250
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2375
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1935
A
I TSM
Surge on-state current
sine wave, 10 ms
125 29.1
kA
I² t I² t
without reverse voltage
4234 x1E3 A²s
V T On-state voltage
On-state current = 2000 A
25 1.85
V
V T(TO)
Threshold voltage
125 1.2
V
r T On-state slope resistance
125 0.325
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 2400 A, gate 40V 5ohm 125 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
125 1000
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 40V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
400 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1570 A
125 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=12V, tp=30µs
25 1000
mA
GATE
V GT
Gate trigger voltage
VD=12V
25 3.5
V
I GT Gate trigger current
VD=12V
25 400
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
9.5 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 125
40.0 / 50.0
1150
°C
kN
g
ORDERING INFORMATION : AT866LT S 36
standard specification
VDRM&VRRM/100

AT866LTS36 Datasheet
AT866LT PHASE CONTROL THYRISTOR
FINAL SPECIFICATION apr 97 - ISSUE : 01
ANSALDO
Th [°C]
130
120
110
100
90
80
70
60
50
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90° 120°
180°
500 1000 1500 2000 2500
IF(AV) [A]
DC
3000 3500
PF(AV) [W]
8000
7000
6000
5000
4000
3000
2000
1000
0
0
60°
30°
120°
90°
180°
DC
500 1000 1500 2000 2500 3000 3500
IF(AV) [A]


Features Datasheet pdf ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT866LT Repetitive voltage up to Mean on-state current Su rge current 3600 V 2375 A 29.1 kA FINA L SPECIFICATION apr 97 - ISSUE : 01 Sy mbol Characteristic Conditions Tj [ C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetiti ve peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak of f-state voltage Repetitive peak reverse current Repetitive peak off-state curr ent V=VRRM V=VDRM 3600 3700 3600 250 2 50 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-st ate current Mean on-state current Surge on-state current I² t On-state voltag e Threshold voltage On-state slope resi stance 180° sin, 50 Hz, Th=55°C, dou ble side cooled 180° sin, 50 Hz, Tc=85 °C, double side cooled sine wave, 10 ms without reverse voltage On-s.
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