AUIRFZ24NL

AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications AUIRFZ24NS AUIRFZ24NL HEXFET® Power MOSFET VDSS 55V RDS(on) max. 0.07 ID 17A DD S G D2-Pak AUIRFZ24NS S GD TO-262 AUIRFZ24NL G Gate D Drain S Source Base part number AUIRFZ24NL AUIRFZ24NS P...