OptiMOS™-P Power-Transistor
Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalan...
OptiMOS™-P Power-
Transistor
Features P-Channel Enhancement mode Logic level 150°C operating temperature Avalanche rated; RoHS compliant Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21
BSC130P03LS G
Product Summary V DS R DS(on),max ID
-30 V 13 mΩ -22.5 A
PG-TDSON-8
Type
Package
Marking Lead free
BSC130P03LS G PG-TDSON-8 130P03LS Yes
Packing Dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current
Symbol Conditions
ID I D,pulse
T C=25 °C T C=70 °C T A=25 °C1) T C=25 °C2)
Avalanche energy, single pulse
E AS I D=-22.5 A, R GS=25 Ω
Gate source voltage Power dissipation
Operating and storage temperature ESD class
V GS P tot T C=25 °C
T A=25 °C1) T j, T stg
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value -22.5 -22.5 -12 -90
148
±25 69 2.5 -55 ... 150 1C (1kV-2kV) 260 °C 55/150/56
Unit A
mJ V ...
