BSC320N20NS3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) produc...
BSC320N20NS3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21
Ideal for high-frequency switching and synchronous rectification
Type
BSC320N20NS3 G
200 V 32 mΩ 36 A
Package Marking
PG-TDSON-8 320N20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=36 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
36 24 144 190 ±20 125 -55 ... 150 55/150/56
Unit A
mJ V ...
