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IRFI4227PBF Dataheets PDF



Part Number IRFI4227PBF
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet IRFI4227PBF DatasheetIRFI4227PBF Datasheet (PDF)

  Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching  150°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliabil.

  IRFI4227PBF   IRFI4227PBF


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  Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching  150°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliability IRFI4227PbF HEXFET® Power MOSFET Key Parameters VDS max 200 V VDS (Avalanche) typ. 240 V RDS(ON) typ. @ 10V 21 m IRP max @ TC= 100°C 47 A TJ max 150 °C G Gate S D G TO-220 Full-Pak D Drain S Source Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EP.


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