Document
Features Advanced Process Technology Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 150°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability
IRFI4227PbF
HEXFET® Power MOSFET
Key Parameters
VDS max
200 V
VDS (Avalanche) typ.
240 V
RDS(ON) typ. @ 10V 21 m
IRP max @ TC= 100°C
47
A
TJ max
150 °C
G Gate
S D G
TO-220 Full-Pak
D Drain
S Source
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EP.