Power MOSFET. IRFI4410ZPBF Datasheet

IRFI4410ZPBF MOSFET. Datasheet pdf. Equivalent

Part IRFI4410ZPBF
Description Power MOSFET
Feature   Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  .
Manufacture Infineon
Datasheet
Download IRFI4410ZPBF Datasheet

PD - 97475A IRFI4410ZPbF Applications l High Efficiency Syn IRFI4410ZPBF Datasheet
  Applications  High Efficiency Synchronous Rectification i IRFI4410ZPBF Datasheet
Recommendation Recommendation Datasheet IRFI4410ZPBF Datasheet





IRFI4410ZPBF
 
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
 
IRFI4410ZPbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
RDS(on) max.
ID
100V
7.9m
9.3m
43A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI4410ZPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI4410ZPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43
30
170
47
0.3
± 30
310
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
3.2
65
Units
°C/W
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IRFI4410ZPBF
  IRFI4410ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS  
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100 –––
––– 95
––– 7.9
2.0 –––
––– –––
––– –––
––– –––
––– –––
––– 0.9
Max.
–––
–––
9.3
4.0
20
250
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 26A
V VDS = VGS, ID = 150µA
µA
VDS = 100 V, VGS = 0V
VDS = 100V,VGS = 0V,TJ =125°C
nA  
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance
80 ––– ––– S VDS = 50V, ID = 26A
Qg Total Gate Charge
––– 81 110  
ID = 26A
Qgs Gate-to-Source Charge
––– 18 ––– nC   VDS = 50V
Qgd Gate-to-Drain Charge
––– 23 –––  
VGS = 10V
td(on) Turn-On Delay Time
––– 15 –––
VDD = 65V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
–––
–––
27
43
–––
–––
ns
ID = 26A
RG= 2.7
––– 30 –––
VGS = 10V
Ciss Input Capacitance
––– 4910 –––
VGS = 0V
Coss Output Capacitance
––– 330 –––
VDS = 50V
Crss Reverse Transfer Capacitance
––– 150 ––– pF   ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 –––
VGS=0V,VDS= 0V to 80V See Fig. 11
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 680 –––
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
43
170
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 26A,VGS = 0V 
––– 47 71 ns TJ = 25°C
––– 54
––– 110
––– 140
81
160
210
nC
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 85V
IF = 26A
di/dt= 100A/µs
––– 2.5 ––– A  TJ = 25°C  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.91mH, RG = 25, IAS = 26A, VGS =10V. Part not recommended for use above this value.
Pulse width 400µs; duty cycle 2%.
Ris measured at TJ approximately 90°C.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
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